DocumentCode :
1945140
Title :
Monte Carlo Simulation of Semiconductor Devices: A Critical Review
Author :
Lugli, Paolo ; Jacoboni, Carlo
Author_Institution :
Dipartimento di Fisica e Centro Interuniversitario di Struttura della Materia dell´´Universita´´ di Modena, Via Campi 213/A, 41100 Modena, Italy, Via Campi 213/A, 41100 Modena, Italia
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
97
Lastpage :
101
Abstract :
We present a critical discussion of the Monte Carlo simulation as applied to semiconductor device modelling. The advantages and limitations of such approach are discussed and compared with more traditional simulators. Critical points are pointed out and analyzed. A variety of applications to different structures is then outlined.
Keywords :
Boundary conditions; Electromagnetic compatibility; Electrons; Electrostatics; Jacobian matrices; Monte Carlo methods; Particle scattering; Poisson equations; Semiconductor devices; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436933
Link To Document :
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