• DocumentCode
    1945159
  • Title

    A Simplified Model for the Characterization of Antimony Ion Implantation and Diffusion on Silicon

  • Author

    Fonseca, Reusi Ines

  • Author_Institution
    Laboratório de Microeletrÿnica da Escola Politécnica da USP, Departamento de Engenharia de Eletricidade, P. O. Box 8174, 05508 São Paulo, Brasil
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    449
  • Lastpage
    452
  • Abstract
    The main purpose of this work is to show how with a simple analytical model of diffusion, using only R and xj experimental data, is it possible to calculate the relationship between the electrically active charge and the initial implanted dose of Antimony in Silicon. It will be shown that Qel/Qdose ≪ l in agreement with many others authors1,2,3, and a lower diffusion coefficient than that commonly used by SUPREM II simulator is achieved through this model, which allows good fit with the experimental data.
  • Keywords
    Analytical models; Annealing; Bipolar transistors; Fabrication; Impurities; Ion implantation; Power dissipation; Resistors; Silicon; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1945159