• DocumentCode
    1945266
  • Title

    Influence of the Fabrication Conditions on the p*-TaSi2/POLY-Si Gate Quality

  • Author

    Mazure, C. ; Schwalke, U. ; Neppl, F. ; Eichinger, P. ; Metzger, M.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Microelectronics, D-8000 Mÿnchen 83, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    The effect of different polycide fabrication steps on the resulting p+ gate quality is investigated. In particular the boron diffusion is studied in correlation with the oxygen contamination. The role of the quality of the TaSi2/poly-Si interface and of the annealing atmosphere on the boron redistribution are pointed out
  • Keywords
    Annealing; Atmosphere; Boring; Boron; Contamination; Fabrication; Silicides; Sputtering; Surface cleaning; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1945266