Plasma Anodisation of Silicon for Advanced VLSI

Inductively coupled, RF stimulated plasma anodisation of silicon is discussed in terms of both MOS electrical properties and the oxidation of Si3N4/SiO2/Si materials systems. The electrical properties of the plasma oxides grown at 400°C are comparable to those of thermal oxides grown at 1000°C. Preliminary results based on transmission electron microscopy observations prior to and after plasma anodisation indicate that Si3N4/SiO2 Strips on silicon exhibit interesting lateral oxidation behaviour and therefore Si3N4 may be a potential mask against plasma anodisation for advanced VLSI.