Some aspects in the design of discrete MOS-bipolar Darlington power switches

Author

Biswas, Sujit K. ; Basak, Biswarup

Author_Institution

Dept. of Electr. Eng., Jadavpur Univ., Calcutta, India

fYear

1989

fDate

1-5 Oct. 1989

Firstpage

1211

Abstract

The operation of a high-speed, high-power discrete MOS-bipolar Darlington switch is studied, and the influence of principal parameters is examined. It is determined that the power MOSFET should be selected with adequate safe operating area, low drain-source resistance, and low gate-charge factor. A device with a higher current rating than what is predicted is preferable. The bipolar transistor should have adequate SOA, low base-emitter drop, and high current gain. The drive circuit should have a low impedance and should provide a steady negative drive during off-period. A circuit layout with reduced wire lengths and loops should be used for the interconnections between the MOSFET and bipolar transistor as well as for drive signal connection.<>

Keywords

bipolar transistors; insulated gate field effect transistors; power transistors; semiconductor switches; discrete MOS-bipolar Darlington power switches; drive circuit; high current gain; low base-emitter drop; low drain-source resistance; low gate-charge factor; low impedance; power MOSFET; Bipolar transistors; Capacitance; Equivalent circuits; MOSFET circuits; Power MOSFET; Power transistors; Snubbers; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/IAS.1989.96797

Filename

96797