DocumentCode
19454
Title
Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2
Author
Yang Geng ; Wen Yang ; Hong-Liang Lu ; Yuan Zhang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Shi-Jin Ding ; Zhang, David Wei
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Volume
35
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
1266
Lastpage
1268
Abstract
The impacts of postdeposition annealing in O2 on the electrical performance of atomic-layer-deposited ZnO thin-film transistors (TFTs) have been investigated. The TFTs are fabricated on transparent quartz substrates with Al2O3 dielectrics, ZnO active layers, and Cr/Au electrodes. The best field-effect mobility of 21.3 cm2/Vs and a large ON/OFF current ratio of 107 are obtained under 400°C annealing treatment in O2. Furthermore, analysis indicates that reduction of OH bonds in both ZnO and Al2O3 layers is the key issue to achieve the excellent properties.
Keywords
II-VI semiconductors; aluminium compounds; annealing; atomic layer deposition; chromium; gold; oxygen; quartz; thin film transistors; zinc compounds; Al2O3; Cr-Au; O2; ZnO; atomic layer deposition; field effect mobility; mobility enhancement; off current suppression; postdeposition annealing; temperature 400 degC; thin film transistors; Aluminum oxide; Annealing; Atomic layer deposition; Thin film transistors; Zinc oxide; High mobility; ZnO; atomic layer deposition; hydroxyl residuals; thin-film transistors (TFTs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2365194
Filename
6940286
Link To Document