Title :
Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2
Author :
Yang Geng ; Wen Yang ; Hong-Liang Lu ; Yuan Zhang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Shi-Jin Ding ; Zhang, David Wei
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The impacts of postdeposition annealing in O2 on the electrical performance of atomic-layer-deposited ZnO thin-film transistors (TFTs) have been investigated. The TFTs are fabricated on transparent quartz substrates with Al2O3 dielectrics, ZnO active layers, and Cr/Au electrodes. The best field-effect mobility of 21.3 cm2/Vs and a large ON/OFF current ratio of 107 are obtained under 400°C annealing treatment in O2. Furthermore, analysis indicates that reduction of OH bonds in both ZnO and Al2O3 layers is the key issue to achieve the excellent properties.
Keywords :
II-VI semiconductors; aluminium compounds; annealing; atomic layer deposition; chromium; gold; oxygen; quartz; thin film transistors; zinc compounds; Al2O3; Cr-Au; O2; ZnO; atomic layer deposition; field effect mobility; mobility enhancement; off current suppression; postdeposition annealing; temperature 400 degC; thin film transistors; Aluminum oxide; Annealing; Atomic layer deposition; Thin film transistors; Zinc oxide; High mobility; ZnO; atomic layer deposition; hydroxyl residuals; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2365194
