Title :
Verification of Ion Implantation Models by Monte Carlo Simulations
Author :
Hobler, G. ; Selberherr, S.
Author_Institution :
Institut fÿr Allgemeine Elektrotechnik und Elektronik, Technical University of Vienrna, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 Vienna, AUSTRIA
Abstract :
Moonte Carlo simulations are perfectly suited to check the validity of simiple models. We investigate 3 models: First, we show that 1D models for the implantation into multilayer targets give reasonable results only if the stopping powers of mask and bulk material are similar. Second, we discuss the construction of 2D point responses from 1D profiles. Third, we show that the method of superposing poin it responses at mask edges may fail in some cases.
Keywords :
Amorphous materials; Analytical models; Crystallization; Gallium arsenide; Ion implantation; Monte Carlo methods; Nonhomogeneous media; Physics; Scattering; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy