DocumentCode
1945476
Title
III-V Compound Devices on Silicon : Situation and Perspectives
Author
Hirtz, P. ; Charasse, M.N.
Author_Institution
Laboratoire Central de Recherche, Thomson-CSF, Domaine de Corbeville, F-91401 Orsay Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Keywords
Crystallography; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Silicon; Substrates; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436948
Link To Document