DocumentCode :
1945476
Title :
III-V Compound Devices on Silicon : Situation and Perspectives
Author :
Hirtz, P. ; Charasse, M.N.
Author_Institution :
Laboratoire Central de Recherche, Thomson-CSF, Domaine de Corbeville, F-91401 Orsay Cedex, France
fYear :
1988
fDate :
13-16 Sept. 1988
Keywords :
Crystallography; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Silicon; Substrates; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436948
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1945476
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