DocumentCode :
1945568
Title :
0.9 eV Potential Barrier Schottky Diode on 0.75-0.5 eV Gap Gax In1-x ASa-Si:HPt
Author :
Deneuville, A. ; Valentin, F. ; Belkouch, S.
Author_Institution :
Laboratoire d´´Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, F-38042 Grenoble Cedex, France; University Joseph Fourier, Grenoble, France
fYear :
1988
fDate :
13-16 Sept. 1988
Abstract :
The I(V,T) curves of such structures for 1000 Ã… of a-Si:H and x = 0.2 and 0.47 are both similar to those of Pt/a-Si:H diodes, so controlled by the Pt/a-Si:H interface. This opens new perspectives for MESFET on GaxIn1-xAs.
Keywords :
Absorption; Contamination; Glow discharges; Hydrogen; Insulation; MESFET integrated circuits; Optical fibers; Schottky diodes; Semiconductor diodes; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5436951
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1945568
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