Very Low Resistivity AuMn Gate Ohmic Contacts for GaInAs Diffused JFETs

For GaInAs/InP junction field effect transistors as well as heterojunction bipolar transistors, the achievement of very low resistivity P type ohmic contact is a very critical step because the Schottky barrier height on these materials is quite high. The realization of a highly doped P⁺ layer by Zn diffusion in a semi-closed box and the use of MnAu alloy contact have allowed to solve these difficulties : in fact, a contact resistivity as low as l0-7 ¿ cm² has been obtained.