DocumentCode :
1945730
Title :
Suppression of Parasitic Bipolar Effects in Soi Mosfets by Neutron Irradiation
Author :
Ipri, A.C. ; Dolny, G.M. ; Vu, D.P. ; Batty, M.W.
Author_Institution :
David Sarnoff Research Center, Princeton, NJ
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
34
Lastpage :
35
Keywords :
Bipolar transistors; Breakdown voltage; Charge carrier lifetime; Degradation; Displays; Lattices; MOSFETs; Neutrons; Power supplies; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664781
Filename :
664781
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1945730
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