Migration of Fluorine Atoms and Influence on Shallow P* N Junction in BF*2 Implanted Silicon under RTA

The migration of fluorine atoms in BF⁺2 implanted silicon under RTA has been analysed using SIMS, the microstructural defect of BF⁺2 implanted silicon before and after RTA has been observed using TEM, and the reverse leakage current of BF⁺2 implanted diodes after RTA has been measured. The results show that the amorphous layer and the damaged crystalline region strongly influence fluorine redistribution during RTA, but the anomalous migration of fluorine atoms has no measurable influence on the electrical properties of shallow P⁺N junction.