Formation of Shallow P* Junctions by Implantation into Silicide

PMOS transistors with channel lengths down to 0.35¿m have been fabricated by implanting boron into TiSi2 and using a low temperature anneal (800°C) to outdiffuse the dopant and form the P+ junction. This method allows the formation of shallow, low resistance junctions (¿0.26¿m, 5¿/sq) and retains any ion damage within the silicide. Electrical measurements show reverse leakage currents of ~ 1nA/cm² and PMOS characteristics comparable to or better than conventionally formed PMOS transistors.