• DocumentCode
    1945804
  • Title

    Shadowing Effect in Self-Aligned Contacts

  • Author

    Camerlenghi, E. ; Servida, E. ; Tosi, M.

  • Author_Institution
    SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    A comparison between arsenric and phosphorus implanted self-aligned contacts is presented; by using 2D process simulations the high leakage defectivity measured on the As contacts has been explained. Its origin arises from an insufficient overlap between the contact diffusion and the field oxide, due to a shadowing effect in a critical zone of the contact.
  • Keywords
    CMOS process; Doping profiles; EPROM; Implants; Lead compounds; Leakage current; Microelectronics; Performance evaluation; Shadow mapping; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436964