DocumentCode
1945804
Title
Shadowing Effect in Self-Aligned Contacts
Author
Camerlenghi, E. ; Servida, E. ; Tosi, M.
Author_Institution
SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A comparison between arsenric and phosphorus implanted self-aligned contacts is presented; by using 2D process simulations the high leakage defectivity measured on the As contacts has been explained. Its origin arises from an insufficient overlap between the contact diffusion and the field oxide, due to a shadowing effect in a critical zone of the contact.
Keywords
CMOS process; Doping profiles; EPROM; Implants; Lead compounds; Leakage current; Microelectronics; Performance evaluation; Shadow mapping; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436964
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