DocumentCode
1945827
Title
Conducting Diffusion Barrier : Formation and Characterisation of WN Obtained by thermal Annealing under NH3 OF W Films Deposited on Si
Author
Deneuville, A. ; Benyahya, M. ; Brunel, M. ; Canut, B.
Author_Institution
Laboratoire d´´Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, F-38042 Grenoble Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
From Rutherford Backscattering and X-ray diffraction we show that above a critical W thickness (≪ 2000 Ã…), WSi2 covered by ¿ WN can be formed by annealing under NH3 of W films deposited on C-Si. Its resistivity is ¿ ~ 100¿¿-cm.
Keywords
Annealing; Backscatter; Conductive films; Crystallization; Probes; Semiconductor films; Silicides; Thermal conductivity; Tungsten; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436965
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