Title :
Conducting Diffusion Barrier : Formation and Characterisation of WN Obtained by thermal Annealing under NH3 OF W Films Deposited on Si
Author :
Deneuville, A. ; Benyahya, M. ; Brunel, M. ; Canut, B.
Author_Institution :
Laboratoire d´´Etudes des Propriétés Electroniques des Solides, CNRS, BP 166, F-38042 Grenoble Cedex, France
Abstract :
From Rutherford Backscattering and X-ray diffraction we show that above a critical W thickness (≪ 2000 Ã…), WSi2 covered by ¿ WN can be formed by annealing under NH3 of W films deposited on C-Si. Its resistivity is ¿ ~ 100¿¿-cm.
Keywords :
Annealing; Backscatter; Conductive films; Crystallization; Probes; Semiconductor films; Silicides; Thermal conductivity; Tungsten; X-ray diffraction;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
