Title :
Reliability Aspects of VLSI Metallisation with Diffusion Barriers
Author :
Röska, G. ; Neppl, F.
Author_Institution :
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
Abstract :
In this work we show the necessity of diffusion barriers for scaled VLSI and investigate the resulting changes of reliability risks. Accelerating stress tests at relevant test structures are presented and discussed in detail.
Keywords :
Aluminum; Contact resistance; Degradation; Life estimation; MONOS devices; Metallization; Silicon; Stress; Testing; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
