• DocumentCode
    1945881
  • Title

    Reliability Aspects of VLSI Metallisation with Diffusion Barriers

  • Author

    Röska, G. ; Neppl, F.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    In this work we show the necessity of diffusion barriers for scaled VLSI and investigate the resulting changes of reliability risks. Accelerating stress tests at relevant test structures are presented and discussed in detail.
  • Keywords
    Aluminum; Contact resistance; Degradation; Life estimation; MONOS devices; Metallization; Silicon; Stress; Testing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1945881