A new uncooled thermal IR detector using silicon diode

Author

Kim, Jae-Kwan ; Han, Chul-Hi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

fYear

2000

fDate

23-27 Jan 2000

Firstpage

102

Lastpage

107

Abstract

A new thermal infrared detector using temperature characteristics of a diode is proposed and developed. Micromachined isolated silicon diode for IR detection (MISIR) utilizes electrochemical etching technique to achieve the thermal isolation of the diode. Very high dependence on the junction temperature of the diode enables high responsivity of the MISIR and electrochemical etching provides effective isolation with simple and low-cost process. The fabricated MISIR exhibits the detectivity of 1.2×10¹⁰ (cm Hz^½/W) under air ambient at room temperature

Keywords

elemental semiconductors; etching; infrared detectors; micromachining; microsensors; semiconductor diodes; silicon; MISIR; Si; electrochemical etching; micromachining; silicon diode; temperature characteristics; thermal infrared detector; thermal isolation; uncooled device; Etching; Infrared detectors; Micromachining; P-n junctions; Semiconductor diodes; Silicon; Substrates; Temperature dependence; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on

Conference_Location

Miyazaki

ISSN

1084-6999

Print_ISBN

0-7803-5273-4

Type

conf

DOI

10.1109/MEMSYS.2000.838498

Filename

838498