DocumentCode
1945928
Title
The Particle Simulation of self-aligned GaAs MESFETs with a Submicrometer Gate-length
Author
Yamada, Yoshinori ; Ikeda, Shiroh ; Shimojoh, Naomasa
Author_Institution
Department of Electrical Engineering and Computer Science, Kumamoto University, Kumamoto 860, JAPAN
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
111
Lastpage
114
Abstract
The self-aligned GaAs MESFET with 0.25 ¿m gate-length has been analyzed by the two-types of particles simulator(TPS) and the regional simulator(RES) which are useful for drastic reduction of the number of particles. The numbers of particles employed in the TPS and RES are less than that in the conventional simulator by factors of about 8 and 18 - 54, respectively.
Keywords
Analytical models; Computational modeling; Computer simulation; Electrons; Equations; Fluctuations; Gallium arsenide; MESFETs; Neodymium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436969
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