Title :
The Particle Simulation of self-aligned GaAs MESFETs with a Submicrometer Gate-length
Author :
Yamada, Yoshinori ; Ikeda, Shiroh ; Shimojoh, Naomasa
Author_Institution :
Department of Electrical Engineering and Computer Science, Kumamoto University, Kumamoto 860, JAPAN
Abstract :
The self-aligned GaAs MESFET with 0.25 ¿m gate-length has been analyzed by the two-types of particles simulator(TPS) and the regional simulator(RES) which are useful for drastic reduction of the number of particles. The numbers of particles employed in the TPS and RES are less than that in the conventional simulator by factors of about 8 and 18 - 54, respectively.
Keywords :
Analytical models; Computational modeling; Computer simulation; Electrons; Equations; Fluctuations; Gallium arsenide; MESFETs; Neodymium;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
