Title :
A new polycrystalline silicon technology for integrated sensor applications
Author :
Wang, Mingxiang ; Meng, Zhiguo ; Zohar, Yitshak ; Wong, Man
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A novel metal-induced lateral crystallization (MILC) technique has been applied to the formation of polycrystalline silicon (poly-Si) with greatly enhanced material characteristics. Compared to conventional poly-Si, MILC poly-Si gives rise to much improved performance not only in sensors but also in thin film transistors. A variety of sensing and electronic devices can be realized simultaneously on MILC poly-Si, thus making MILC an enabling technology for integrated silicon micro-machining
Keywords :
crystallisation; elemental semiconductors; micromachining; microsensors; silicon; thin film transistors; Si; electronic device; integrated sensor; metal-induced lateral crystallization; micromachining; polycrystalline silicon technology; thin film transistor; Chemical sensors; Chemical technology; Crystalline materials; Crystallization; Mechanical sensors; Nickel; Sensor phenomena and characterization; Silicon; Temperature sensors; Thin film transistors;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838500
