Title :
High aspect ratio TSV copper filling with different seed layers
Author :
Wolf, M. Jurgen ; Dretschkow, Thomas ; Wunderle, Bernhard ; Jurgensen, Nils ; Engelmann, Gunter ; Ehrmann, Oswin ; Uhlig, Albrecht ; Michel, Bernd ; Reichl, Herbert
Author_Institution :
Fraunhofer Inst. for Reliability & Microintegration (IZM), Berlin
Abstract :
The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.
Keywords :
coating techniques; copper alloys; filling; reliability; thermomechanical treatment; copper electrochemical deposition; electrolyte; high aspect ratio TSV copper filling; reliability assessment; seed layers; thermomechanical modeling; thermomechanical simulation; through silicon via filling; Copper; Etching; Filling; Passivation; Polymer films; Resists; Silicon; Sputtering; Substrates; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-2230-2
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2008.4550029
