Title :
IIP3 optimization through body biasing in Low Noise Amplifiers
Author :
Aya, Mabrouki ; Thierry, Taris ; Yann, Deval ; Jean-Baptiste, Begueret
fDate :
June 28 2009-July 1 2009
Abstract :
This paper studies the effect of bulk control on the input third order intercept point (IIP3) of a CMOS Low Noise Amplifier (LNA) at RF frequencies. The circuit reveals an optimum bulk biasing at which a maximum IIP3 is achieved under low power consumption. The cascode LNA, here reported, operates at 2.4 GHz and is implemented in a 0.13 mum CMOS process. Supplied under 1.1V, it achieves nominal 13.86 dB gain and 3.23 dB noise figure (NF) for a 3mA current consumption. Tuning the bulk to source voltage to -0.55 V the IIP3 exhibits a maximum 6.63 dBm for a 1.1 mW overall power consumption. Whereas the gain and NF reach 8.2 dB and 4.8 dB respectively.
Keywords :
CMOS integrated circuits; circuit tuning; field effect MIMIC; low noise amplifiers; CMOS low noise amplifier; IIP3 optimization; cascode LNA; current 3 mA; frequency 2.4 GHz; gain 13.86 dB; gain 8.2 dB; input third order intercept point; noise figure 3.23 dB; noise figure 4.8 dB; power 1.1 mW; size 0.13 mum; tuning; voltage -0.55 V; voltage 1.1 V; CMOS process; Circuit noise; Energy consumption; Gain; Low-noise amplifiers; Noise figure; Noise measurement; Radio frequency; Radiofrequency amplifiers; Voltage; Low noise amplifier (LNA); Noise figure (NF); Third order inter-modulation point (IM3); Third order intercepts point (IIP3);
Conference_Titel :
Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
Conference_Location :
Toulouse
Print_ISBN :
978-1-4244-4573-8
Electronic_ISBN :
978-1-4244-4574-5
DOI :
10.1109/NEWCAS.2009.5290441