Title :
Noise of GaAs Diodes
Author :
Moatadid, A. ; Gasquet, D. ; de Murcia, M. ; Nougier, J.P.
Author_Institution :
Centre d´´Electronique de Montpellier (CNRS-UA 391), Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France
Abstract :
By comparing experimental and modelled noise results of a n*nn* GaAs diode, we show that the lack of precise knowledge on the variation of the diffusion coefficient D(E), versus the electric field E. may lead to erroneous predictions, in particular as concerning the noise behaviour of GaAs devices. The electric field and free carrier density profiles are also studied in Gunn oscillation operating regime.
Keywords :
Charge carrier density; Diodes; Doping profiles; Equations; Gallium arsenide; Gunn devices; Polarization; Predictive models; Semiconductor process modeling; Steady-state;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
