DocumentCode
1946235
Title
Noise of GaAs Diodes
Author
Moatadid, A. ; Gasquet, D. ; de Murcia, M. ; Nougier, J.P.
Author_Institution
Centre d´´Electronique de Montpellier (CNRS-UA 391), Université des Sciences et Techniques du Languedoc, F-34060 Montpellier Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
By comparing experimental and modelled noise results of a n*nn* GaAs diode, we show that the lack of precise knowledge on the variation of the diffusion coefficient D(E), versus the electric field E. may lead to erroneous predictions, in particular as concerning the noise behaviour of GaAs devices. The electric field and free carrier density profiles are also studied in Gunn oscillation operating regime.
Keywords
Charge carrier density; Diodes; Doping profiles; Equations; Gallium arsenide; Gunn devices; Polarization; Predictive models; Semiconductor process modeling; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436989
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