Title :
Microwave Power GaAs/AlGaAs Heterojunction Bipolar Transistor Modelling
Author :
Metcalfe, J.G. ; Hayes, C. ; Holden, A.J. ; Long, A.P.
Author_Institution :
Plessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
Abstract :
A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.
Keywords :
Breakdown voltage; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Integrated circuit modeling; MESFETs; Microwave devices; Microwave transistors; Power transistors; SPICE;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
