Title :
Rapid Thermal Annealing of Be Implants into Undoped InP
Author_Institution :
Siemens AG, Research Laboratories, ZFE FKE 1, Otto-Hahn-Ring 6, 8000 Munchen 83, F. R. G.
Abstract :
The anneal behavior of Be implantations into undoped InP was studied using a capless, rapid thermal annealing (RTA) process. It is shown that shallow p-type layers in InP can be obtained reproducibly making this process suitable for device fabrication. Maximum hole concentrations and minimum in-diffusion are observed for anneal durations of about 1 minute. Out-diffusion of implanted Be is identified as the main reason for low hole concentrations and can be decreased by co-implanting matrix atoms.
Keywords :
Dielectrics; Electrons; Implants; Indium phosphide; Page description languages; Rapid thermal annealing; Read only memory; Strips; Temperature distribution; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
