Shallow Junctions of Boron Implanted in GE+ Preamorphized ≪100≫ Si Wafers

p-type shallow junctions in silicon were obtained by preamorphization with Ge^¿ ions, 20 KeV B⁺ implants at doses in the 5* 10¹⁴ - 5*1O¹⁵/Cm² range, and thermal annealing at 850 °C or 950 °C for 1/2 hr. The junction depth was ≪ 0.3 ¿m in the preamorphized wafers and ≫ 0.3 ¿m in the B-bare Si implanted wafers. The leakage current density measured at a reverse bias of 10 v was about 100 pA/cm² for both procedures. The leakage maps on the 5´´ wafer gave a density of short circuits of 0.6/cm².