Title :
Nano-scale bending test of Si beam for MEMS
Author :
Namazu, Takahiro ; Isono, Yoshitada ; Tanaka, Takeshi
Author_Institution :
Dept. of Mech. Eng., Ritsumeikan Univ., Kyoto, Japan
Abstract :
We carried out a nanometer scale bending test for a single crystal silicon (Si) beam using an atomic force microscope (AFM). Nanometer scale Si beams with widths from 200 nm to 800 nm and a thickness of 255 nm were fabricated on an Si diaphragm by means of the field-enhanced anodization using AFM and the anisotropic wet etching. Bending tests for a micro- and millimeter scale beam were also carried out using an ultra-precision hardness tester and scratch tester, respectively. The mechanical property of Si beams on a nanometer scale was compared with that measured on a micro- and millimeter scale. SEM observations of the fracture surface were performed in order to reveal the size effect on the bending strength
Keywords :
atomic force microscopy; bending strength; elemental semiconductors; fracture mechanics; hardness testing; micromechanical devices; nanotechnology; nondestructive testing; scanning electron microscopy; silicon; surface structure; 200 to 800 nm; 255 nm; MEMS; Si; Si beam; Si diaphragm; anisotropic wet etching; atomic force microscope; bending strength; field-enhanced anodization; fracture surface; microscale; millimeter scale; nanometer scale; nanoscale bending test; scratch tester; size effect; ultra-precision hardness tester; Anisotropic magnetoresistance; Atomic beams; Atomic force microscopy; Mechanical factors; Mechanical variables measurement; Micromechanical devices; Scanning electron microscopy; Silicon; Testing; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838517