DocumentCode
1946479
Title
RF and DC power handling characterization of thin film resistors embedded on LCP
Author
Ponchak, George E. ; Jordan, Jennifer L. ; Horst, Stephen ; Papapolymerou, John
Author_Institution
NASA Glenn Res. Center, Cleveland, OH
fYear
2008
fDate
27-30 May 2008
Firstpage
713
Lastpage
717
Abstract
For the first time, the DC and RF power handling capability of NiCrAISi thin film resistors on liquid crystal polymer (LCP) is presented. It is shown that there is a maximum power that the resistors can handle without causing degradation of the resistors, and this value is significantly less than the power required for burn out of the resistors. ED AX shows that the resistors fail due to electromigration of Ni and Cr, and migration of C from the LCP.
Keywords
aluminium compounds; chromium compounds; electromigration; liquid crystal polymers; nickel compounds; thin film resistors; DC power handling characterization; NiCrAlSi; RF characterization; electromigration; liquid crystal polymer; thin film resistors; Circuits; Coplanar waveguides; Polymer films; Radio frequency; Resistors; Switches; Temperature; Testing; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2008. ECTC 2008. 58th
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-4244-2230-2
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2008.4550051
Filename
4550051
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