Title :
On the Microwave Low Temperature Analysis Behaviour of HEMTs
Author :
Belache, A. ; Vanoverschelde, A. ; Dambrine, G. ; Wolny, M.
Author_Institution :
Centre Hyperfr?quences et Semiconducteurs, CNRS-UA 287, Universit? des Sciences et Techniques de Lille-Flandres-Artois, F-59655 Villeneuve-d´´Ascq Cedex, France
Abstract :
Low temperature behaviour of HEMTs is studied under static and microwave conditions. The influence of trapping effects are analysed by means of a specified measurement procedure of the gate capacitance and drain-source resistance, On an appropriate structure that allOws to avoid parasitic phenomena such as collapse, it was found that microwave transconductance and cut-off frequency improve, which 1s confirmed with numerical results.
Keywords :
Capacitance measurement; Cutoff frequency; Electrical resistance measurement; Frequency measurement; HEMTs; MODFETs; Microwave measurements; Parasitic capacitance; Temperature; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
