• DocumentCode
    1946606
  • Title

    Modeling and Performance of Double Heterojunction GaAlAs/GaAs Integrated Injection Logic. Fabrication and DC Characterization of the Basic Cell

  • Author

    Marty, A. ; Jamai, J. ; Vannel, J.P. ; Bailbe, J.P.

  • Author_Institution
    Laboratoire d´´Automatique et d´´Analyse des Systÿmes du CNRS 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    This paper first presents a quantitative estimate of the potentialities of the GaAlAs/GaAs H. I2L which relies on an accurate modeling related to physical device parameters. The interdependence of the forward and reverse current gains of the DHSTs processed by MBE and Mg-ion implantation which is subsequently analysed provides a verification of the charge-control models used for this evaluation.
  • Keywords
    Computer aided analysis; DH-HEMTs; Delay effects; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Integrated circuit technology; Logic circuits; Logic design; Logic devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5437008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1946606