Title :
Modeling and Performance of Double Heterojunction GaAlAs/GaAs Integrated Injection Logic. Fabrication and DC Characterization of the Basic Cell
Author :
Marty, A. ; Jamai, J. ; Vannel, J.P. ; Bailbe, J.P.
Author_Institution :
Laboratoire d´´Automatique et d´´Analyse des Systÿmes du CNRS 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
Abstract :
This paper first presents a quantitative estimate of the potentialities of the GaAlAs/GaAs H. I2L which relies on an accurate modeling related to physical device parameters. The interdependence of the forward and reverse current gains of the DHSTs processed by MBE and Mg-ion implantation which is subsequently analysed provides a verification of the charge-control models used for this evaluation.
Keywords :
Computer aided analysis; DH-HEMTs; Delay effects; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Integrated circuit technology; Logic circuits; Logic design; Logic devices;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
