DocumentCode :
1946638
Title :
A GaAs on Si Coplanar Technology by Embedded Molecular Beam Epitaxy
Author :
Liang, J.B. ; De Boeck, J. ; Mertens, R. ; Borghs, G.
Author_Institution :
Interuniversity Micro-Electronics Center vzw, Kapeldreef 75, B-3030 Leuven, Belgium
fYear :
1988
fDate :
13-16 Sept. 1988
Keywords :
Circuits; Gallium arsenide; Hafnium; Metallization; Molecular beam epitaxial growth; Silicon; Substrates; Surface morphology; Surface topography; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
Print_ISBN :
2868830994
Type :
conf
Filename :
5437009
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1946638
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