DocumentCode
1946642
Title
Investigation of the Influence of DX Centers on HEMT Operation at Room Temperature
Author
Godts, P. ; Constant, E. ; Zimmermann, J. ; Depreeuw, D.
Author_Institution
Centre Hyperfréquences et Semiconducteurs, CNRS-UA 287, Université des Sciences et Techniques de Lille Flandres Artois, F-59655 Villeneuve-d´´Ascq Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
A study of DX centers in GaAIAs layers is presented, both experimental and theoretical. It is shown that due to DX centers, at room temperature, the microwave transconductance of HEMTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected if DX centers did not exist. As a result, for room temperature applications special structures designed in order to eliminate DX centers are not really necessary.
Keywords
Boundary conditions; Electrons; Gallium arsenide; HEMTs; Impurities; Poisson equations; Resumes; Temperature; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437010
Link To Document