Title :
Investigation of the Influence of DX Centers on HEMT Operation at Room Temperature
Author :
Godts, P. ; Constant, E. ; Zimmermann, J. ; Depreeuw, D.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs, CNRS-UA 287, Université des Sciences et Techniques de Lille Flandres Artois, F-59655 Villeneuve-d´´Ascq Cedex, France
Abstract :
A study of DX centers in GaAIAs layers is presented, both experimental and theoretical. It is shown that due to DX centers, at room temperature, the microwave transconductance of HEMTs can be considerably higher than that obtained from the DC regime, and approaches the values which could be expected if DX centers did not exist. As a result, for room temperature applications special structures designed in order to eliminate DX centers are not really necessary.
Keywords :
Boundary conditions; Electrons; Gallium arsenide; HEMTs; Impurities; Poisson equations; Resumes; Temperature; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
