DocumentCode
1946685
Title
Elimination of Twinning in Molecular Beam Epitaxy of GaAs/Si and GaAs/Insulator
Author
Fontaine, C. ; Castagne, J. ; Bedel, E. ; Munoz-Yague, A.
Author_Institution
Laboratoire d´´Automatique et d´´Analyse des Systÿmes du CNRS, 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
We present a study of GaAs nucleation on Si and (Ca, Sr) F2 (100) surfaces which shows that a 2D growth can be achieved for very thin (15 A°) deposits obtained at low temperature (25-100°C). Raising the temperature to 300-400°C leads to a stoichiometric and monocrystalline layer. Electron diffraction shows a diagram without twin spots and a surface devoid of noticeable roughness. The proposed procedure paves the way for the subsequent use of low temperature techniques aimed at the fabrication of co-integrated structures associating GaAs and Si.
Keywords
Diffraction; Electrons; Fabrication; Gallium arsenide; Insulation; Molecular beam epitaxial growth; Rough surfaces; Strontium; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5437012
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