DocumentCode :
1946692
Title :
Transistor sizing and VDD scaling for low power CMOS circuits
Author :
Kabbani, Adnan
Author_Institution :
Dept. of Elec. & Comp. Eng., Ryerson Univ., Toronto, ON, Canada
fYear :
2009
fDate :
June 28 2009-July 1 2009
Firstpage :
1
Lastpage :
4
Abstract :
Depending on the normalized switching power model, this paper develops two power optimization techniques. The first deals with transistor sizing problem and presents a scheme to size transistors according to a specific design goal. The second technique relies on the joint transistor sizing and supply voltage scaling for reducing the switching power dissipation under specific delay requirements. This technique exhibits superiority over the first for the considered technology processes: UMC 0.13 mum and the Predictive high-k 45 nm.
Keywords :
CMOS integrated circuits; low-power electronics; optimisation; transistor circuits; CMOS circuits; low power circuits; power optimization; switching power dissipation; transistor sizing; Capacitance; Delay; Equations; Frequency; Integrated circuit modeling; Inverters; Power dissipation; Power engineering and energy; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
Conference_Location :
Toulouse
Print_ISBN :
978-1-4244-4573-8
Electronic_ISBN :
978-1-4244-4574-5
Type :
conf
DOI :
10.1109/NEWCAS.2009.5290468
Filename :
5290468
Link To Document :
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