DocumentCode
1946692
Title
Transistor sizing and VDD scaling for low power CMOS circuits
Author
Kabbani, Adnan
Author_Institution
Dept. of Elec. & Comp. Eng., Ryerson Univ., Toronto, ON, Canada
fYear
2009
fDate
June 28 2009-July 1 2009
Firstpage
1
Lastpage
4
Abstract
Depending on the normalized switching power model, this paper develops two power optimization techniques. The first deals with transistor sizing problem and presents a scheme to size transistors according to a specific design goal. The second technique relies on the joint transistor sizing and supply voltage scaling for reducing the switching power dissipation under specific delay requirements. This technique exhibits superiority over the first for the considered technology processes: UMC 0.13 mum and the Predictive high-k 45 nm.
Keywords
CMOS integrated circuits; low-power electronics; optimisation; transistor circuits; CMOS circuits; low power circuits; power optimization; switching power dissipation; transistor sizing; Capacitance; Delay; Equations; Frequency; Integrated circuit modeling; Inverters; Power dissipation; Power engineering and energy; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
Conference_Location
Toulouse
Print_ISBN
978-1-4244-4573-8
Electronic_ISBN
978-1-4244-4574-5
Type
conf
DOI
10.1109/NEWCAS.2009.5290468
Filename
5290468
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