• DocumentCode
    1946692
  • Title

    Transistor sizing and VDD scaling for low power CMOS circuits

  • Author

    Kabbani, Adnan

  • Author_Institution
    Dept. of Elec. & Comp. Eng., Ryerson Univ., Toronto, ON, Canada
  • fYear
    2009
  • fDate
    June 28 2009-July 1 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Depending on the normalized switching power model, this paper develops two power optimization techniques. The first deals with transistor sizing problem and presents a scheme to size transistors according to a specific design goal. The second technique relies on the joint transistor sizing and supply voltage scaling for reducing the switching power dissipation under specific delay requirements. This technique exhibits superiority over the first for the considered technology processes: UMC 0.13 mum and the Predictive high-k 45 nm.
  • Keywords
    CMOS integrated circuits; low-power electronics; optimisation; transistor circuits; CMOS circuits; low power circuits; power optimization; switching power dissipation; transistor sizing; Capacitance; Delay; Equations; Frequency; Integrated circuit modeling; Inverters; Power dissipation; Power engineering and energy; Semiconductor device modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems and TAISA Conference, 2009. NEWCAS-TAISA '09. Joint IEEE North-East Workshop on
  • Conference_Location
    Toulouse
  • Print_ISBN
    978-1-4244-4573-8
  • Electronic_ISBN
    978-1-4244-4574-5
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2009.5290468
  • Filename
    5290468