DocumentCode
1946751
Title
Development of a high repetition rate and high voltage switching power supply with a SiC-JFET for an induction synchrotron
Author
Ise, K. ; Takaki, K. ; Okamura, K. ; Wake, M. ; Takayama, K. ; Oosawa, Y. ; Jiang, W.
Author_Institution
Iwate Univ., Iwate, Japan
fYear
2011
fDate
19-23 June 2011
Firstpage
487
Lastpage
492
Abstract
This paper evaluates the capability of a silicon carbide junction field-effect transistor for an induction synchrotron. The device was operated with a repetition rate of 1 MHz, a drain-source voltage of 1 kV, and a drain current of 50 A in burst mode. Based on the results, the feasibility of continuous-mode operation from the point of view of maximum junction temperature is evaluated. If the total thermal resistance is smaller than 0.7 °C/W, the device has potential to be applied in an induction synchrotron.
Keywords
junction gate field effect transistors; pulsed power supplies; silicon compounds; synchrotrons; wide band gap semiconductors; JFET; current 50 A; frequency 1 MHz; high voltage switching power supply; induction synchrotron; junction field-effect transistor; voltage 1 kV; Driver circuits; Logic gates; MOSFETs; Resistance; Resistors; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference (PPC), 2011 IEEE
Conference_Location
Chicago, IL
ISSN
2158-4915
Print_ISBN
978-1-4577-0629-5
Type
conf
DOI
10.1109/PPC.2011.6191471
Filename
6191471
Link To Document