DocumentCode
1946853
Title
High-level aging estimation for FPGA-mapped designs
Author
Amouri, Abdulazim ; Tahoori, Mehdi
Author_Institution
Dependable Nano Comput., Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
fYear
2012
fDate
29-31 Aug. 2012
Firstpage
284
Lastpage
291
Abstract
As the state-of-the-art FPGA devices use the latest advancements in CMOS technology, they also face the reliability challenges of nano-scale CMOS. Transistor aging, mainly due to Bias Temperature Instability (BTI) and Hot Carrier Injection (HCI), is a major reliability issue. In this paper, we present a tool to predict the amount of aging-induced degradation for designs mapped to FPGA devices, to help the designers, in an early phase of the design flow, to choose the appropriate mapping and/or optimization efforts, in order to prolong the lifetime of their FPGA-mapped designs. The tool is based on system level abstractions for both BTI and HCI device level models, in addition to implicit device-level information existed in the power and timing reports provided from the FPGA´s vendor tools. A case study of using the tool to explore different designs and mapping options shows that aging of the FPGA device is dependent on the design loaded onto it. Furthermore, different mappings and optimizations of the same circuit can result in different aging rates.
Keywords
CMOS logic circuits; ageing; circuit optimisation; field programmable gate arrays; hot carriers; integrated circuit reliability; logic design; nanoelectronics; BTI; FPGA devices; FPGA-mapped designs; HCI device level models; aging-induced degradation; bias temperature instability; circuit optimizations; high-level aging estimation; hot carrier injection; implicit device-level information; nanoscale CMOS technology; reliability; transistor aging; Aging; Delay; Estimation; Field programmable gate arrays; Human computer interaction; Integrated circuit modeling; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Field Programmable Logic and Applications (FPL), 2012 22nd International Conference on
Conference_Location
Oslo
Print_ISBN
978-1-4673-2257-7
Electronic_ISBN
978-1-4673-2255-3
Type
conf
DOI
10.1109/FPL.2012.6339194
Filename
6339194
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