Influence of Hydrogen Related Defects on the Qot´ Dit Build-Up Due to Stress and Annealing in the MOS System

Author

Wulf, F. ; BrÄunig, D.

Author_Institution

Hahn-Meitner-Institute Berlin GmHb, Department of Data Processing and Electronics, Glienicker Str. 100, D-1000 Berlin 39, F.R.G.

fYear

1988

fDate

13-16 Sept. 1988

Abstract

The build-up of oxide charges, Qut, and interface states, Dit, during stress -irradiation or bias temperatures (BT)-as well as the annealing of these defects has been investigated. The post-stress annealing and the degradation process due to BT-stress can be explained by the chemical reaction of the hydrogen in Lhe SiO!2. With this new model it becomes possible to describe the correlation of irradiation and BT-stress and moreover the sensitivity of MOS-devices against carrier injection as well as reverse annealing, dose rate effects and the temperature dependent D!it-annealing.

Keywords

Annealing; Chemical processes; Data processing; Degradation; Frequency measurement; Hydrogen; Interface states; Stress; Temperature sensors; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1988. ESSDERC '88. 18th European

Conference_Location

Montpellier, France

Print_ISBN

2868830994

Type

conf

Filename

5437022

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1946924