• DocumentCode
    1946945
  • Title

    Wavelength-controlled DFB LDs for WDM systems

  • Author

    Yamaguchi, M. ; Kudo, K. ; Yamazaki, H. ; Sasaki, T.

  • Author_Institution
    Opto-Electron. Res. labs., NEC Corp., Tsukuba, Japan
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    Wavelength division multiplexed (WDM) lightwave systems are expected to use many wavelength-controlled light sources. The simultaneous fabrication of different wavelength laser diodes (LDs) on a wafer is therefore an important technology which would allow WDM light sources to be prepared at low cost. The lasing wavelengths of these LDs must be precisely controlled to coincide with pre-assigned wavelength grids for WDM systems. Each LD with different wavelength should have uniform lasing characteristics. We developed a new type of wavelength controlled distributed feedback (DFB) LD. Uniform lasing characteristics were demonstrated for 40-channel different wavelength DFB LDs fabricated on one wafer, over a 75 nm-wide wavelength range.
  • Keywords
    distributed feedback lasers; electron beam lithography; optical fabrication; optical fibre networks; optical transmitters; semiconductor growth; semiconductor lasers; semiconductor technology; vapour phase epitaxial growth; wavelength division multiplexing; MOVPE growth; WDM light sources; WDM lightwave systems; WDM systems; electron beam direct writing; lasing wavelengths; pre-assigned wavelength grids; uniform lasing characteristics; wavelength controlled distributed feedback LD; wavelength laser diodes; wavelength-controlled DFB LDs; wavelength-controlled light sources; Costs; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Gratings; Light sources; Lighting control; Photonic band gap; Size control; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619148
  • Filename
    619148