Title :
Wavelength-controlled DFB LDs for WDM systems
Author :
Yamaguchi, M. ; Kudo, K. ; Yamazaki, H. ; Sasaki, T.
Author_Institution :
Opto-Electron. Res. labs., NEC Corp., Tsukuba, Japan
Abstract :
Wavelength division multiplexed (WDM) lightwave systems are expected to use many wavelength-controlled light sources. The simultaneous fabrication of different wavelength laser diodes (LDs) on a wafer is therefore an important technology which would allow WDM light sources to be prepared at low cost. The lasing wavelengths of these LDs must be precisely controlled to coincide with pre-assigned wavelength grids for WDM systems. Each LD with different wavelength should have uniform lasing characteristics. We developed a new type of wavelength controlled distributed feedback (DFB) LD. Uniform lasing characteristics were demonstrated for 40-channel different wavelength DFB LDs fabricated on one wafer, over a 75 nm-wide wavelength range.
Keywords :
distributed feedback lasers; electron beam lithography; optical fabrication; optical fibre networks; optical transmitters; semiconductor growth; semiconductor lasers; semiconductor technology; vapour phase epitaxial growth; wavelength division multiplexing; MOVPE growth; WDM light sources; WDM lightwave systems; WDM systems; electron beam direct writing; lasing wavelengths; pre-assigned wavelength grids; uniform lasing characteristics; wavelength controlled distributed feedback LD; wavelength laser diodes; wavelength-controlled DFB LDs; wavelength-controlled light sources; Costs; Epitaxial growth; Epitaxial layers; Erbium-doped fiber amplifier; Gratings; Light sources; Lighting control; Photonic band gap; Size control; Wavelength division multiplexing;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619148