Operation of Majority and Minority Carrier MOSFET´s at Liquid Helium Temperature

The operation of ``accumulation mode´´ or ``majority carrier´´ MOS transistors at liquid helium temperature is reported and compared with normal (minority carrier) MOSFET´s. The adverse kink/hysteresis effects are absent, while the current levels are highly comparable. This offers an alternative for cryogenic CMOS: under certain reserves, a well-less CMOS technology based on n⁺ nn⁺ and p⁺ np⁺ MOSFET´s in a n-type substrate is a way to avoid the Si-MOSFET cryogenic anomalies.