Title :
A vacuum packaged differential resonant accelerometer using gap sensitive electrostatic stiffness changing effect
Author :
Lee, Byeung-leul ; Oh, Chang-hoon ; Lee, Soo ; Oh, Yong-Soo ; Chun, Kuk-jin
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
This paper proposes an INS (Inertial Navigation System) grade, surface micro-machined differential resonant accelerometer (DRXL) by using the epitaxially grown thick polysilicon process. This proposed DRXL device produces a differential digital output upon an applied acceleration, and the principle is a gap-dependent electrical stiffness variation of the electrostatic resonator with torsion beam structures. Using this new operating concept, we designed, fabricated and tested the proposed device. The final device was fabricated by using the wafer level vacuum packaging process. The hermetic sealing cap structure was made of Pyrex 7740 glass with Ti layer as gettering material, and this cap wafer was anodically bonded with the polysilicon wafer at vacuum ambience. The measured Q-factor of the vacuum packaged DRXL was about 1×103 and the estimated inner pressure was about 200[mTorr]. We also achieved 73[Hz] output frequency change per unit G(9.8 m/sc) input with 12,716[Hz] nominal resonant frequency
Keywords :
Q-factor; accelerometers; electrostatic devices; micromachining; micromechanical resonators; microsensors; packaging; Q-factor; Si; differential resonant accelerometer; electrostatic resonator; gap sensitive electrostatic stiffness changing effect; hermetic sealing; inertial navigation system; polysilicon epitaxial layer; surface micromachining; torsion beam; vacuum packaging; Acceleration; Accelerometers; Electrostatics; Inertial navigation; Molecular beam epitaxial growth; Packaging; Particle beams; Resonance; Testing; Wafer scale integration;
Conference_Titel :
Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on
Conference_Location :
Miyazaki
Print_ISBN :
0-7803-5273-4
DOI :
10.1109/MEMSYS.2000.838542