Title :
A robust large signal non-quasi-static MOSFET model for circuit simulation
Author :
Wang, H. ; Gildenblat, G.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
This work introduces a surface-potential-based compact non-quasi-static (NQS) MOSFET model that solves the current continuity equation, works in all regions of MOSFET operation (including accumulation, depletion, and inversion regions) and can be implemented into SPICE-based circuit simulators. The new model is obtained by extending the previously reported spline-collocation method and has been implemented in Verilog-A code. The study of NQS effects in several important circuits is included and the model is verified by comparison with direct numerical solution of the continuity equation.
Keywords :
MOSFET; SPICE; circuit simulation; semiconductor device models; splines (mathematics); surface potential; MOSFET model; SPICE-based circuit simulators; Verilog-A; accumulation operation region; circuit simulation; current continuity equation; depletion operation region; inversion operation region; large signal nonquasistatic model; spline-collocation method; surface-potential-based compact model; Circuit simulation; Differential equations; Hardware design languages; MOSFET circuits; Partial differential equations; Radio frequency; Robustness; Semiconductor device modeling; Signal design; Spline;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358718
