Title :
The next generation BSIM for sub-100nm mixed-signal circuit simulation
Author :
Xi, Xuemei ; He, Jin ; Dunga, Mohan ; Lin, Chung-Hsun ; Heydari, Babak ; Wan, Hui ; Chan, Mansun ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.
Keywords :
MOSFET; circuit simulation; mixed analogue-digital integrated circuits; semiconductor device models; silicon-on-insulator; 100 nm; BSIM; SOI; completely continuous current; device models; double-gate MOSFET; mixed-signal circuit simulation; noncharge sheet current; scaled CMOS technology; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Integrated circuit modeling; MOSFETs; Physics; Poisson equations; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358720
