Title :
Electroluminescence from Silicon Devices -A Tool for Device and Material Characterization
Author_Institution :
Siemens AG, Corporate Research and Technology, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.C.
Abstract :
The light distribution generated by electroluminescence phenomena inside silicon devices yields information on the functioning of the devices as well as on the materials used. An improved camera system has been installed, with a spectral sensitivity from near UV to near IR (300-1200nm) allowing the registration of various electrolumiscence phenomena, with high temporal and spatial resolution.
Keywords :
Cameras; Charge carrier processes; Electroluminescent devices; Electrons; Infrared detectors; Optical devices; Radiation detectors; Radiative recombination; Silicon devices; Spatial resolution;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
