Title :
Current and temperature distribution impact on electromigration failure location in SWEAT structure
Author :
Giroux, F. ; Gounelle, C. ; Vialle, N. ; Mortini, P. ; Ghibaudo, G.
Author_Institution :
Central R&D, SGS-Thomson Microelectron., Crolles, France
Abstract :
A temperature profile along a SWEAT structure obtained by a simple simulator is presented. The temperature gradient and the ion flux divergence are deduced from this temperature profile. Their relative importance on the failure location is discussed as regard to the stress current. The results of simulations are correlated with experimental electromigration data
Keywords :
circuit reliability; current density; current distribution; electromigration; fault location; integrated circuit testing; metallisation; temperature distribution; SWEAT structure; current distribution; electromigration failure location; ion flux divergence; simulator; standard wafer-level electromigration acceleration test; stress current; temperature distribution; temperature gradient; temperature profile; Atomic measurements; Current density; Electromigration; Insulation; Life estimation; Metal-insulator structures; Stress; Temperature distribution; Testing; Thermal conductivity;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303473
