Current and temperature distribution impact on electromigration failure location in SWEAT structure

Author

Giroux, F. ; Gounelle, C. ; Vialle, N. ; Mortini, P. ; Ghibaudo, G.

Author_Institution

Central R&D, SGS-Thomson Microelectron., Crolles, France

fYear

1994

fDate

22-25 Mar 1994

Firstpage

214

Lastpage

217

Abstract

A temperature profile along a SWEAT structure obtained by a simple simulator is presented. The temperature gradient and the ion flux divergence are deduced from this temperature profile. Their relative importance on the failure location is discussed as regard to the stress current. The results of simulations are correlated with experimental electromigration data

Keywords

circuit reliability; current density; current distribution; electromigration; fault location; integrated circuit testing; metallisation; temperature distribution; SWEAT structure; current distribution; electromigration failure location; ion flux divergence; simulator; standard wafer-level electromigration acceleration test; stress current; temperature distribution; temperature gradient; temperature profile; Atomic measurements; Current density; Electromigration; Insulation; Life estimation; Metal-insulator structures; Stress; Temperature distribution; Testing; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1757-2

Type

conf

DOI

10.1109/ICMTS.1994.303473

Filename

303473