Hot Carrier Stress Induced Changes in Most Transconductance Structure

An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulated and analytical study. The transconductance curve study is shown to be a good tool for the correct characteration of the stress induced damage, and experimentally observed transconductance degradations are reproduced by simulation and by means of a simple analytic model. The usual classification of damage in terms of threshold voltage shift and mazximum transconductance degradation is shown to fail under general conditions, where structural alterations of electrical characteristics take place.