Title :
A direct method to extract effective geometries and series resistances of MOS transistors
Author :
Karlsson, Peter R. ; Jeppson, Kjell O.
Author_Institution :
Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel
Keywords :
carrier mobility; electric resistance; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; statistical analysis; MOS transistors; MOSFET; channel width dependence; direct method; effective geometries; linear regression technique; mobility reduction factor; parameter extraction; rapid characterization; series resistances; Circuit synthesis; Condition monitoring; Electric resistance; Geometry; Linear regression; MOSFETs; Optimization methods; SPICE; Solid state circuits; Threshold voltage;
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
DOI :
10.1109/ICMTS.1994.303479
