Oxide Degradation and Breakdown in Stressed MOS Capacitors

Author

Placencia, I. ; Suñé, J. ; Barniol, N. ; Fares, Elie ; Aymerich, X.

Author_Institution

Centro Nacional de Microelectr?nica, Departamento de F?sica, Universidad Aut?norma de Barcelona, SP-08193 Bellaterra, Barcelona, Spain

fYear

1988

fDate

13-16 Sept. 1988

Abstract

A new model that relates the degradation and breakdown phenomena of SiO22 films has been presented. The crux of the model is that the trap generation rate is proportional to the energy lost by the electrons by interaction with the SiO2 lattice. In this framework, the experimental evolution of the applied voltage in constant-current stress experiments and the quasi-linear relationship between log(time-to-breakdown) and log(current density) have been predicted.

Keywords

Breakdown voltage; Cathodes; Degradation; Dielectric breakdown; Dielectric thin films; Electric breakdown; Electron traps; Lattices; MOS capacitors; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1988. ESSDERC '88. 18th European

Conference_Location

Montpellier, France

Print_ISBN

2868830994

Type

conf

Filename

5437038

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1947269