DocumentCode
1947274
Title
Comparison of the MCT and MOSFET for a high frequency inverter
Author
Hudgins, J.L. ; Blanco, D.F. ; Menhart, S. ; Portnoy, W.M.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fYear
1989
fDate
1-5 Oct. 1989
Firstpage
1255
Abstract
MOS-controlled thyristors (MCTs) were tested for operating characteristics when switching 100 A and above, at up to 100 kHz. Power MOSFETs and a silicon-controlled rectifier (SCR) were also used as switches for a performance comparison. The MCTs operated with the lowest energy losses, due to a combination of low forward voltage drop and fast turn-on and turn-off. The MCTs tested have proved to be fast switching devices with low energy losses. According to the data presented, these devices should be able to perform at frequencies up to several hundred kilohertz. Incorporating them into an inverter circuit, such as a half or full-bridge arrangement, can provide operation at 100 to 200 kHz.<>
Keywords
invertors; thyristor applications; 100 A; 100 to 200 kHz; MOS-controlled thyristors; MOSFET; energy losses; forward voltage drop; high frequency inverter; silicon-controlled rectifier; Energy loss; Frequency; Inverters; Low voltage; MOSFET circuits; Power MOSFET; Rectifiers; Switches; Testing; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/IAS.1989.96804
Filename
96804
Link To Document