DocumentCode

1947307

Title

Leakage Currents Reduction at the Gate Edge of Sdb Soi Nmos Transistors

Author

Kang, Sungweon ; Kim, Kwangsoo ; Kim, Dojin ; Kang, Sangwon

Author_Institution

New Structural Devices Section, Electronics and Telecommunications Research Institute, Daejeon, Korea

fYear

1992

fDate

6-8 Oct. 1992

Firstpage

50

Lastpage

51

Keywords

Current measurement; Etching; Ion implantation; Isolation technology; Leakage current; MOSFETs; Silicon; Very large scale integration; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1992. IEEE International

Conference_Location

Ponte Vedra Beach, FL

ISSN

1078-621X

Print_ISBN

0-7803-7439-8

Type

conf

DOI

10.1109/SOI.1992.664789

Filename

664789