Title :
Leakage Currents Reduction at the Gate Edge of Sdb Soi Nmos Transistors
Author :
Kang, Sungweon ; Kim, Kwangsoo ; Kim, Dojin ; Kang, Sangwon
Author_Institution :
New Structural Devices Section, Electronics and Telecommunications Research Institute, Daejeon, Korea
Keywords :
Current measurement; Etching; Ion implantation; Isolation technology; Leakage current; MOSFETs; Silicon; Very large scale integration; Voltage; Wafer bonding;
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
Print_ISBN :
0-7803-7439-8
DOI :
10.1109/SOI.1992.664789
