DocumentCode :
1947320
Title :
On-wafer high-frequency measurement improvements
Author :
Carbonero, J.L. ; Joly, R. ; Morin, G. ; Cabon, B.
Author_Institution :
Central R&D, SGS-Thomson Microelectron., Crolles, France
fYear :
1994
fDate :
22-25 Mar 1994
Firstpage :
168
Lastpage :
173
Abstract :
As the size of advanced BJT or MOSFET devices shrink, very high frequency measurements are required to enable accurate circuit simulations. In order to conduct successfully high frequency measurements, efficient calibration and accurate de-embedding procedures must be followed as well as proper employment of the network analyzer. In this work, a new de-embedding procedure which takes into account propagation effects is proposed. Results are presented and compared to those obtained with other techniques. Errors due to an improper use of the network analyzer are also looked into and, subsequently, a general solution scheme is given
Keywords :
S-parameters; calibration; circuit analysis computing; integrated circuit testing; microwave measurement; network analysers; 45 MHz to 18 GHz; BJT devices; MOSFET devices; calibration; circuit simulations; de-embedding procedures; network analyzer; on-wafer high-frequency measurement; Calibration; Capacitance measurement; Frequency measurement; Hafnium; MOSFET circuits; Particle measurements; Performance evaluation; Probes; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1994. ICMTS 1994. Proceedings of the 1994 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1757-2
Type :
conf
DOI :
10.1109/ICMTS.1994.303482
Filename :
303482
Link To Document :
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