Title :
A 1.8V triode-type transconductor and its application to a 10MHz 3rd-order Chebyshev low pass filter
Author :
Kim, Young-Ho ; Park, JUng-Woo ; Park, Mun-Yag ; Yu, Hyun-Kyu
Author_Institution :
Dept. of Large Scale SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A fully differential dual input CMOS transconductor, with high linearity and low distortion, is proposed. To achieve high performance characteristics at low supply voltage, three design considerations are described from the viewpoint of DC-offsets, linear range, and distortions. A 1.8 V 10 MHz fully-differential 3rd-order Chebyshev Gm-C low pass filter, using this transconductor, is designed and fabricated using a 0.18 μm CMOS process. Measured results in a nominal condition (Vc=1.05 V) show 11.3 MHz of bandwidth, 43.7 dBr of stop-band attenuation at 40 MHz, 0.38 dB of pass-band ripple, and 74.4 dB of dynamic range. In addition, the IIP3 obtained at the optimum resistance of the resistor utilized as a distortion canceller is 16.3 dBm. The filter consumes 2.34 mA at 1.8 V power supply.
Keywords :
CMOS analogue integrated circuits; Chebyshev filters; low-pass filters; low-power electronics; 0.18 micron; 1.05 V; 1.8 V; 10 MHz; 11.3 MHz; 2.34 mA; 40 MHz; CMOS transconductor; Chebyshev low pass filter; DC-offsets; Gm-C filter; distortion cancelling resistor; fully differential dual input transconductor; high linearity transconductor; linear range; low distortion transconductor; low supply voltage; pass-band ripple; stop-band attenuation; triode-type transconductor; Attenuation measurement; Bandwidth; CMOS process; Chebyshev approximation; Distortion measurement; Electrical resistance measurement; Linearity; Low pass filters; Low voltage; Transconductors;
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
DOI :
10.1109/CICC.2004.1358733
